180 GHz fT and fmax self-aligned SiGeCHBT using selective epitaxial growth of the base

被引：7

作者：

Chevalier, P ^{[1
]}

Fellous, C ^{[1
]}

Martinet, B ^{[1
]}

Leverd, F ^{[1
]}

Saguin, F ^{[1
]}

Dutartre, D ^{[1
]}

Chantre, A ^{[1
]}

机构：

[1] STMicroelectronics, F-38926 Crolles, France

来源：

ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2003年

关键词：

D O I：

10.1109/ESSDERC.2003.1256873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the device optimization work done with the study of carbon incorporation into the SiGe base of a bipolar deposited by selective epitaxy. First the bipolar fabrication is addressed. Effects of carbon on electrical characteristics are then discussed. Performances of a bipolar transistor using an optimal carbon profile derived from a design of experiments are presented A 180 GHz f(T) and f(max) bipolar device with a BVceo of 1.7 V is demonstrated It is to the authors' knowledge the best-balanced performance reported for a fully self-aligned SiGeC HBT using a selective epitaxial base.

引用

页码：299 / 302

页数：4

共 5 条

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[2]

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APPLIED PHYSICS LETTERS, 1997, 71 (11) :1522-1524

[4]

Rieh JS, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P771, DOI 10.1109/IEDM.2002.1175952

[5]

SCHAFER H, 2003, 1 INT SIGE TECHN DEV, P105

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