Molecular hydrogen in hot-wire hydrogenated amorphous silicon

被引：9

作者：

Liu, X ^{[1
]}

Iwaniczko, E ^{[1
]}

Pohl, RO ^{[1
]}

Crandall, RS ^{[1
]}

机构：

[1] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998 | 1998年 / 507卷

关键词：

D O I：

10.1557/PROC-507-595

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the elastic properties of hydrogenated amorphous silicon (a-Si:H) prepared by hot wire chemical-vapor deposition (HWCVD). With 1 at.% H, this material has been found to be the only amorphous solid which has a low-temperature internal friction more than two orders of magnitude smaller than all other amorphous solids studied to date, as reported recently. As the hydrogen concentration increases above 1 at.%, a broad relaxation peak in internal friction around 5 K is observed. Even more striking is an extremely narrow peak in internal friction accompanied by a discontinuous change in the sound velocity at 13.8 K, which coincides with the triple point temperature of molecular hydrogen. Evidences are provided to show that this anomaly is caused by bulk molecular hydrogen which undergoes a liquid-solid phase transition. This is the first observation for the existence of bulk H, in HWCVD a-Si:H.

引用

页码：595 / 600

页数：6

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