Influence of metal-diamond interfaces on the response of UV photoconductors

被引：17

作者：

Di Benedetto, R

Marinelli, M

Messina, G

Milani, E

Pace, E

Paoletti, A

Pini, A

Santangelo, S

Scuderi, S

Tucciarone, A

Verona-Rinati, G

Bonanno, G

机构：

[1] Univ Florence, Dipartimento Astron & Sci Spazio, XUV Lab, I-50125 Florence, Italy

[2] Osserv Astrofis Catania, Catania, Italy

[3] Univ Roma Tor Vergata, INFM, Dipartimento Sci & Tecnol Fis & Energet, Rome, Italy

[4] Univ Reggio Calabria, Dipartimento Meccan & Mat, I-89100 Reggio Di Calabria, Italy

来源：

关键词：

diamond films; electrical properties; photoconductivity; UV range;

D O I：

10.1016/S0925-9635(00)00572-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A systematic investigation on the influence of metal-diamond interfaces on the electro-optical properties and on the UV response of CVD diamond photo-detectors was carried out in order to identify the optimal electric contacts maximizing the performance. To this purpose, a set of four nearly identical diamond samples has been grown using the microwave plasma enhanced CVD technique. Micro-Raman spectroscopy and photoluminescence have been utilized to assess their quality. Interdigitated planar contacts have been photolithographically deposited on each sample, using different layered metals. In particular, titanium-gold, chromium-gold, aluminum-gold and gold were selected. The performance of these detectors has been investigated under steady photon irradiation in the 120-300-nm wavelength range. The experimental results have been compared and discussed with respect to I-V characteristics, dark current levels, signal-to-noise ratio, spectral response and time response. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：698 / 705

页数：8

共 17 条

[1] THE ORIGIN OF THE BROAD-BAND LUMINESCENCE AND THE EFFECT OF NITROGEN DOPING ON THE OPTICAL-PROPERTIES OF DIAMOND FILMS [J].

BERGMAN, L ;

MCCLURE, MT ;

GLASS, JT ;

NEMANICH, RJ .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) :3020-3027

[2] MICROPHOTOLUMINESCENCE AND RAMAN-SCATTERING STUDY OF DEFECT FORMATION IN DIAMOND FILMS [J].

BERGMAN, L ;

STONER, BR ;

TURNER, KF ;

GLASS, JT ;

NEMANICH, RJ .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) :3951-3957

[3] DIAMOND METAL-SEMICONDUCTOR-METAL ULTRAVIOLET PHOTODETECTORS [J].

BINARI, SC ;

MARCHYWKA, M ;

KOOLBECK, DA ;

DIETRICH, HB ;

MOSES, D .

[4] The Catania Astrophysical Observatory facility for UV CCD characterization [J].

Bonanno, G ;

Bruno, P ;

Cali, A ;

Cosentino, R ;

DiBenedetto, R ;

Puleo, M ;

Scuderi, S .

EUV, X-RAY, AND GAMMA-RAY INSTRUMENTATION FOR ASTRONOMY VII, 1996, 2808 :242-249

[5] CVD diamond films as photon detectors [J].

Galluzzi, F ;

Marinelli, M ;

Masotti, L ;

Milani, E ;

Pace, E ;

Rossi, MC ;

Salvatori, S ;

Santoro, M ;

Sciortino, S ;

Rinati, GV .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 409 (1-3) :423-425

[6]

GLUKE P, 1997, P CORN C NEW YORK US

[7] Post-growth treatments and contact formation on CVD diamond films for electronic applications [J].

Jany, C ;

Foulon, F ;

Bergonzo, P ;

Marshall, RD .

[8] DIAMOND RADIATION DETECTORS [J].

KANIA, DR ;

LANDSTRASS, MI ;

PLANO, MA ;

PAN, LS ;

HAN, S .

[9]

Marinelli M, 1998, ELEC SOC S, V97, P556

[10] Photoconductive properties of thin film diamond [J].

McKeag, RD ;

Marshall, RD ;

Baral, B ;

Chan, SSM ;

Jackman, RB .

← 1 2 →