Synchronous photoluminescence intermittency (Blinking) along whole semiconductor quantum wires

被引：73

作者：

Glennon, John J. ^{[1
]}

Tang, Rui ^{[1
]}

Buhro, William E. ^{[1
]}

Loomis, Richard A. ^{[1
]}

机构：

[1] Washington Univ, Ctr Mat Innovat, Dept Chem, St Louis, MO 63130 USA

来源：

NANO LETTERS | 2007年 / 7卷 / 11期

关键词：

D O I：

10.1021/nl0714583

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Photoluminescence microscopy studies have detected synchronous-photoluminescence-intensity fluctuations along entire cadmium selenide quantum wires under continuous illumination. While similar photoluminescence blinking has been reported previously for semiconductor quantum dots and rods, the observation of synchronous blinking spanning the entire length of quantum wires, with diameters approximate to 9 nm and lengths >5 mu m, is remarkable. We propose a mechanism to account for the synchronous blinking that is based on a dynamic, photolytic filling of surface-trap sites.

引用

页码：3290 / 3295

页数：6

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