Low-temperature in situ large-strain plasticity of silicon nanowires

被引：278

作者：

Han, Xiaodong

Zheng, Kun

Zhang, YueFei

Zhang, Xiaona

Zhang, Ze ^{[1
]}

Wang, Zhong Lin

机构：

[1] Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100022, Peoples R China

[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 16期

关键词：

D O I：

10.1002/adma.200602705

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The large-strain plasticity (LSP) of single-crystalline silicon nanowires (Si NWs) observed in situ at room temperature by axial tension experiments carried out in an ultrahigh-resolution electron microscope is reported. The LSP is demonstrated to result in a fourfold reduction in NW diameter before fracture (see figure), which is three orders of magnitude higher than that of bulk Si.

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页码：2112 / +

页数：8

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