An 11.4% efficient polycrystalline thin film solar cell based on CuInS2 with a Cd-free buffer layer

被引：170

作者：

Braunger, D

Hariskos, D

Walter, T

Schock, HW

机构：

[1] Inst. für Phys. Elektronik, Universität Stuttgart, D-70569 Stuttgart

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1996年 / 40卷 / 02期

关键词：

D O I：

10.1016/0927-0248(95)00069-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The fabrication of a 11.4% efficient thin film solar cell based on CuInS2 with an In-x(OH,S)(y) buffer layer is described. The device parameters and performance are compared to heterojunctions with a standard CdS buffer layer. A junction breakdown at negative bias under illumination is related to the buffer layer. A simple model implying photoconductive shunting paths is presented.

引用

页码：97 / 102

页数：6

共 12 条

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