Electronic transport in graphene: A semiclassical approach including midgap states

被引:430
作者
Stauber, T.
Peres, N. M. R.
Guinea, F.
机构
[1] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
[2] Univ Minho, Ctr Phys, Dept Phys, P-4710057 Braga, Portugal
来源
PHYSICAL REVIEW B | 2007年 / 76卷 / 20期
关键词
D O I
10.1103/PhysRevB.76.205423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using the semiclassical Boltzmann theory, we calculate the conductivity as a function of the carrier density. We include the scattering from charged impurities but conclude that the estimated impurity density is too low in order to explain the experimentally observed mobilities. We thus propose an additional scattering mechanism involving midgap states, which leads to a similar k dependence of the relaxation time as charged impurities. The proposed scattering mechanism can account for the experimental findings such as the sublinear behavior of the conductivity versus gate voltage and the increase of the minimal conductivity for clean samples. We also discuss temperature dependent scattering due to acoustic phonons.
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页数:10
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