Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

被引：53

作者：

Bel'kov, VV

Ganichev, SD

Schneider, P

Back, C

Oestreich, M

Rudolph, J

Hägele, D

Golub, LE

Wegscheider, W

Prettl, W

机构：

[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Univ Regensburg, Fak Phys, D-93040 Regensburg, Germany

[3] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany

[4] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 128卷 / 08期

关键词：

quantum wells; spin-orbit effects;

D O I：

10.1016/j.ssc.2003.08.022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-hand excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account Spin splitting of conduction and valence bands. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：283 / 286

页数：4

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