Factors which define the α/γ ratio in CsI:Tl crystals

被引：23

作者：

Kudin, AM ^{[1
]}

Sysoeva, EP ^{[1
]}

Sysoeva, EV ^{[1
]}

Trefilova, LN ^{[1
]}

Zosim, DI ^{[1
]}

机构：

[1] Inst Scintillat Mat, UA-61001 Kharkov, Ukraine

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2005年 / 537卷 / 1-2期

关键词：

scintillator; Csi : Tl; light yield; activator concentration; scintillation process;

D O I：

10.1016/j.nima.2004.07.245

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Dependences of light yield and alpha/gamma ratio on the Tl concentration have been studied within a provide range of shaping times. It is shown that the alpha/gamma ratio essentially depends on the Tl concentration. Proper combination of the Tl concentration and optimum shaping time in electronics allows to obtain detectors with rather high fight output for gamma-rays, alpha-particles and alpha/gamma ratio values. It has been shown that both the light yield at alpha-excitation and the alpha/gamma-ratio depend on the time of crystal storage after polishing. On the basis of the idea of the formation of deformation-induced point defects in a thin surface-adjacent layer, the causes of the temporary increasing in light yield for alpha-particle are explained. An explanation is given of the results obtained by Gwin and Murray concerning the fact that the alpha/gamma ratio is practically independent on Tl concentration. (C) 2004 Published by Elsevier B.V.

引用

页码：105 / 112

页数：8

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