A black box model of EDFA's operating in WDM systems

被引：26

作者：

Burgmeier, J ^{[1
]}

Cords, A

Marz, R

Schaffer, C

Stummer, B

机构：

[1] Siemens AG, Publ Commun Networks, D-81359 Munich, Germany

[2] Siemens AG, Res Labs, D-81739 Munich, Germany

[3] Fachhsch Lubeck, D-23562 Lubeck, Germany

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1998年 / 16卷 / 07期

关键词：

ASE; device modeling; EDFA; optical amplifier; WDM;

D O I：

10.1109/50.701405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A black box model is derived for an erbium-doped optical amplifier and is successfully applied to 1480 and 980 mn pumped devices operated under conditions which are typical for wavelength division multiplex (WDM) systems. It allows compound optical amplifiers with arbitrary passive optical circuitry (isolators, couplers, taps, and equalizing filters) to be modeled on the basis of "black box" characteristics. The gain model is based on an analytic solution for the effective two-level laser system, i.e., it is equivalent with the results of most numerical EDFA modeling tools. The model for amplified spontaneous emission (ASE) based on an equivalent ASE source in front of the amplifier can be applied over a aide range of operating points.

引用

页码：1271 / 1275

页数：5

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