Fabrication of cobalt silicide nanowire contacts to silicon nanowires

被引:22
作者
Mohammad, AM [1 ]
Dey, S
Lew, KK
Redwing, JM
Mohney, SE
机构
[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[2] Penn State Univ, Inst Mat Res, University Pk, PA 16802 USA
关键词
D O I
10.1149/1.1598966
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A novel method to fabricate cobalt silicide nanowire contacts to silicon nanowires is described. Nanoporous anodized alumina membranes were used to define the wires' dimensions. Cobalt was deposited electrochemically within the pores of the membranes. On top of the cobalt, gold was deposited electrochemically to catalyze the growth of the silicon nanowires. The well-known vapor-liquid-solid mechanism was used to grow the silicon nanowires. During the growth of silicon, cobalt reacts with the growing silicon nanowire, forming cobalt silicide, and under certain conditions, all of the Au used to catalyze the growth of the silicon nanowire travels along the tip of the growing wire, away from the cobalt silicide/Si interface. We also discuss the influence of the amount of Au catalyst on the structural quality of the wires. (C) 2003 The Electrochemical Society.
引用
收藏
页码:G577 / G580
页数:4
相关论文
共 36 条
[1]  
Ahmed H., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P363, DOI 10.1109/IEDM.1999.824170
[2]  
BLUM W, 1949, PRINCIPLES ELECTROPL, P361
[3]  
Carim AH, 2001, ADV MATER, V13, P1489, DOI 10.1002/1521-4095(200110)13:19<1489::AID-ADMA1489>3.0.CO
[4]  
2-E
[5]   Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].
Cui, Y ;
Lieber, CM .
SCIENCE, 2001, 291 (5505) :851-853
[6]   Investigation of SiGe-heterostructure nanowires [J].
Giovine, E ;
Notargiacomo, A ;
Di Gaspare, L ;
Palange, E ;
Evangelisti, F ;
Leoni, R ;
Castellano, G ;
Torrioli, G ;
Foglietti, V .
NANOTECHNOLOGY, 2001, 12 (02) :132-135
[7]  
Givargizov E. I., 1973, Soviet Physics - Crystallography, V18, P89
[8]   FUNDAMENTAL ASPECTS OF VLS GROWTH [J].
GIVARGIZOV, EI .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :20-30
[9]   GROWTH OF INTERMEDIATE PHASES IN CO/SI DIFFUSION COUPLES - BULK VERSUS THIN-FILM STUDIES [J].
JAN, CH ;
CHEN, CP ;
CHANG, YA .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (03) :1168-1179
[10]   An electron beam nanolithography system and its application to Si nanofabrication [J].
Kurihara, K ;
Iwadate, K ;
Namatsu, H ;
Nagase, M ;
Takenaka, H ;
Murase, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (12B) :6940-6946