High performance Buried Heterostructure 1.55 μm wavelength AlGaInAs/InP multiple quantum well lasers grown entirely by MOVPE technique.

被引：9

作者：

Tanbun-Ek, T ^{[1
]}

Chu, SNG ^{[1
]}

Wisk, PW ^{[1
]}

Pawelek, R ^{[1
]}

Sergent, AM ^{[1
]}

Minch, J ^{[1
]}

Young, E ^{[1
]}

Chuang, SL ^{[1
]}

机构：

[1] Lucent Technol Inc, Murray Hill, NJ 07974 USA

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712736

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication and characterization of a high quality Buried Heterostructure (BH) type 1.55 mu m wavelength strained AlGaInAs/InP MQW laser is reported. The lasers have low threshold current density (600 A/cm(2)) for compressively strained MQW measured from a BH chip with cavity lengths of 545 mu m and 1.5 mu m wide. Low threshold current of less than 10 mA (2 mA with HR facets coated) is obtained. The differential modal gain of the AlGaInAs devices was also found to be superior to that of the conventional strained GaInAsP system.

引用

页码：702 / 705

页数：4