High dielectric constant in CaCu3Ti4O12 bulk and thin films

被引：9

作者：

Zhao, YL ^{[1
]}

Jiao, ZK

Gao, GH

机构：

[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

[2] Taizhou Coll, Dept Phys, Linhai 317000, Peoples R China

来源：

ACTA PHYSICA SINICA | 2003年 / 52卷 / 06期

关键词：

CaCu3Ti4O12; high dielectric constant; PLD;

D O I：

10.7498/aps.52.1500

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

CaCu3Ti4O12 bulk and thin films are prepared successfully by solid-state reaction and pulsed laser deposition (PLD). Dielectric constants epsilon' (1kHz,300K) higher than 14000 are found in both types of CaCu3Ti4O12 materials, which is the best result in this system. We first report the c-axis-oriented epitaxial CaCu3Ti4O12 thin film and its dieletric properties. Such a high dielectric constant does not depend much upon temperature in the range of 100-300K, showing that this material has high thermal stability. The behaviour of dielectric conductivity ad against frequency can be well explained in terms of the hopping mechanism.

引用

页码：1500 / 1504

页数：5

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