Thermal Conductivity Reduction in CoSb3-CeO2 Nanocomposites

被引：31

作者：

Alleno, E. ^{[1
]}

Chen, L. ^{[1
]}

Chubilleau, C. ^{[2
]}

Lenoir, B. ^{[2
]}

Rouleau, O. ^{[1
]}

Trichet, M. F. ^{[1
]}

Villeroy, B. ^{[1
]}

机构：

[1] Univ Paris 12, UMR CNRS 7182, ICMPE CMTR, F-94320 Thiais, France

[2] Ecole Mines, IJL, F-54042 Nancy, France

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 09期

关键词：

Thermoelectricity; skutterudite; composite; microstructure; thermal conductivity; P-TYPE COSB3; THERMOELECTRIC PROPERTIES; ELECTRONIC TRANSPORT; MERIT; DEVICES; FIGURE;

D O I：

10.1007/s11664-009-1043-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CoSb3 + x% CeO2 nanocomposites (x = 1, 3, 5) were synthesized by ball-milling and spark plasma sintering. Scanning electron microscopy showed that some CeO2 nano-inclusions sit at the boundaries of CoSb3 grains. These inclusions also reduce the sizes of the CoSb3 grains and crystallites by inhibiting their growth during sintering. Hall-effect measurements show that the CeO2 inclusions modify the charge-carrier concentration in CoSb3. The variations of the electrical resistivity for the 1% and 3% CeO2 samples can at least partially be attributed to these modifications of the carrier concentration. Nonetheless, the resistivity increase in the 5% CeO2 sample can unambiguously be ascribed to the presence of the CeO2 inclusions. Thermal conductivity is systematically reduced (by more than 15% at 300 K) upon CeO2 addition. Phonon diffusion by the increased number of CoSb3 grain boundaries is one of the mechanisms involved in this reduction.

引用

页码：1966 / 1970

页数：5

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