A new procedure to prepare semiconducting ternary compounds from binary buffer materials and vacuum-deposited copper for photovoltaic applications

被引：54

作者：

Amlouk, A. ^{[1
]}

Boubaker, K. ^{[1
]}

Amlouk, M. ^{[1
]}

机构：

[1] Fac Sci Tunis, Unite Phys Dispositifs Semiconducteurs, Tunis 2092, Tunisia

来源：

VACUUM | 2010年 / 85卷 / 01期

关键词：

CuIn5S8; Cu2SnS3; Thin films; Spray pyrolysis; BETA-IN2S3; THIN-FILMS; CUIN5S8; GROWTH; CUINS2;

D O I：

10.1016/j.vacuum.2010.04.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports the successful deposition of CuIn5S8 and Cu2SnS3 thin films obtained on Pyrex glass substrates using annealing in a sulfur atmosphere at 550 degrees C during evaporation of copper on In2S3 and SnS2 sprayed thin films, respectively. The CuIn5S8 and Cu2SnS3 thin films crystallize in cubic structures. Under suitable experimental conditions, this procedure, using the mobility of copper and silver elements, can be used to prepare many ternary absorber layers from binary buffer materials. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：60 / 64

页数：5

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