Mask prototyping for ultra-deep X-ray lithography: preliminary studies for mask blanks and high-aspect-ratio absorber patterns

被引：15

作者：

Malek, CK ^{[1
]}

机构：

[1] Louisiana State Univ, Ctr Adv Microstruct & Devices, Baton Rouge, LA 70803 USA

来源：

MATERIALS AND DEVICE CHARACTERIZATION IN MICROMACHINING | 1998年 / 3512卷

关键词：

LIGA; deep X-ray lithography; X-ray mask; SU8;

D O I：

10.1117/12.324070

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The use of hard X-ray energies for ultra-deep X-ray lithography requires a thorough re-investigation of all issues associated with the LIGA technology materials issues and processes, in particular for the manufacture of high-energy-X-ray masks. Calculations were performed to compare various mask blanks, in particular thick Kapton and thinned silicon blanks. Absorber pattern formation schemes have been investigated using UV contact printing or X-ray lithography with SU8 photoresist. SU8 photoresist also offers an improved X-ray sensitivity over PMMA resist. Resist patterns over 500 micron deep with aspect ratio over 10 and vertical sidewalls were achieved in SU-8, allowing the use of medium energy range Xrays to obtain high quality patterns of much greater resist thickness.

引用

页码：277 / 285

页数：9