Influence of high-temperature processes on multicrystalline silicon

被引：11

作者：

Schultz, O ^{[1
]}

Riepe, S ^{[1
]}

Glunz, SW ^{[1
]}

机构：

[1] Fraunhofer ISE, DE-79110 Freiburg, Germany

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2004年 / 95-96卷

关键词：

gettering; minority carrier lifetime; multicrystalline silicon;

D O I：

10.4028/www.scientific.net/SSP.95-96.235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several combinations of oxidation and phosphorus diffusion processes suitable for silicon solar cell processing were applied to solar grade multicrystalline silicon. This resulted in drastic changes of the minority carrier lifetime. The effect of extended light exposure of the samples was measured with injection level dependent lifetime spectroscopy. This revealed iron as a contaminant source present in non-treated samples which could significantly be reduced by an appropriate phosphorus diffusion. To monitor the changes with a high spatial resolution the Carrier Density Imaging (CDI) technique was applied showing distinct differences between oxidations and diffusions.

引用

页码：235 / 240

页数：6

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