Properties of amorphous silicon carbide films prepared by PECVD

被引：18

作者：

Huran, J

Hrubcin, L

Kobzev, AP

Liday, J

机构：

[1] JOINT INST NUCL RES, NEUTRON PHYS LAB, DUBNA 141980, RUSSIA

[2] SLOVAK UNIV TECHNOL BRATISLAVA, FAC ELECT ENGN, BRATISLAVA 81219, SLOVAKIA

来源：

VACUUM | 1996年 / 47卷 / 10期

关键词：

Chemical vapor deposition - Experiments - Hydrogenation - Plasma applications - Silicon carbide;

D O I：

10.1016/0042-207X(96)00128-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous SiC was prepared by plasma enhanced chemical vapour deposition of SiH4 and CH4. The properties of the SiC deposits were studied using a combination of infrared (IR), RES, ERD (electron recoiling detection) and AES measurement. Infra red spectra showed the presence of Si-C, Si-H and C-H bonds. The compositions of the silicon, carbon and hydrogen in the films were found to be dependent on the preparation conditions. Copyright (C) 1996 Published by Elsevier Science Ltd

引用

页码：1223 / 1225

页数：3