Low dielectric constant polymers for microelectronics

被引：1069

作者：

Maier, G

机构：

[1] Tech Univ Munich, Lehrstuhl Makromol Stoffe, Inst Tech Chem, D-85747 Garching, Germany

[2] Polymat AG, D-87600 Kaufbeuren, Germany

来源：

PROGRESS IN POLYMER SCIENCE | 2001年 / 26卷 / 01期

关键词：

dielectric constant; interlayer dielectric; intermetal dielectric; low-epsilon-dielectrics; low-epsilon polymer; low-k polymer; polymers for microelectronics;

D O I：

10.1016/S0079-6700(00)00043-5

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

A large variety of polymers has been proposed for use as materials with low dielectric constants for applications in microelectronics. The chemical structures and selected properties of these polymers are discussed in this review. Polyimides, heteroaromatic polymers, poly(aryl ether)s, fluoropolymers, hydrocarbon polymers without any polar groups, films deposited from the gas phase by chemical vapor deposition, plasma enhanced chemical vapor deposition and other techniques are included. Based on the properties described so far, and the requirements for applications as intermetal dielectric material. conclusions regarding the possibilities for further developments are drawn. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：3 / 65

页数：63

共 235 条

[1]

AHNE H, 1988, Patent No. 3716629

[2]

AHNE H, 1989, P POLYM MAT SCI ENG, V60, P629

[3]

AHNE H, 1993, Patent No. 544165

[4]

AHNE H, 1991, Patent No. 391200

[5]

AHNE H, 1988, Patent No. 291779

[6] C-13 NMR ANALYSIS OF FLUORINATED POLYIMIDES AND POLY(AMIC ACID)S [J].

ANDO, S ;

MATSUURA, T ;

NISHI, S .

POLYMER, 1992, 33 (14) :2934-2939

[7]

[Anonymous], 1997, EUR MAT RES SOC S P, V66

[8]

ARNOLD CA, 1989, POLYIMIDES : MATERIALS, CHEMISTRY AND CHARACTERIZATION, P69

[9]

ARNOLD FE, 1994, ADV POLYM SCI, V117, P257

[10]

AUMAN BC, 1995, MATER RES SOC SYMP P, V381, P19, DOI 10.1557/PROC-381-19

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