Role of intermediate layer for La2/3Sr1/3MnO3/SiO2/Si(100) granular thin films

被引：11

作者：

Shim, IB ^{[1
]}

Kim, CS

Park, KT

Oh, YJ

机构：

[1] Kookmin Univ, Dept Phys, Seoul 136702, South Korea

[2] Korea Inst Sci & Technol, Thin Films Technol Res Ctr, Seoul 136791, South Korea

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2001年 / 226卷

基金：

新加坡国家研究基金会;

关键词：

low-field tunnel-type MR; sol-gel deposition; buffer layer; dead layer;

D O I：

10.1016/S0304-8853(00)01401-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetotransport properties of La2/3Sr1/3MnO3 (LSMO) (1500 Angstrom)/YSZ (100-1500 Angstrom)/SiO2/Si (100) bilayers were investigated by low-field magnetotransport measurement at room temperature. It is observed that MR ratio of the films with a YSZ buffer layer (MR = 0.43 %) was much higher than those of the films without a buffer layer (MR = 0.21 %) The better results of the LSMO films with a YSZ diffusion barrier are deduced to be related to the improvement of microstructure of the films and the reduction of the interface reaction between the films and SiO2/Si (100) substrates. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1672 / 1674

页数：3

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