Device characteristics of a 10.1% hydrazine-processed Cu2ZnSn(Se,S)4 solar cell

被引：712

作者：

Barkhouse, D. Aaron R. ^{[1
]}

Gunawan, Oki ^{[1
]}

Gokmen, Tayfun ^{[1
]}

Todorov, Teodor K. ^{[1
]}

Mitzi, David B. ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PROGRESS IN PHOTOVOLTAICS | 2012年 / 20卷 / 01期

关键词：

Cu2ZnSn(S; Se)4; kesterite; earth abundant; thin-film solar cell; solution processing; THIN-FILMS; EFFICIENCY; PERFORMANCE; DEFECTS; STATES; CU(IN; BULK;

D O I：

10.1002/pip.1160

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A power conversion efficiency record of 10.1% was achieved for kesterite absorbers, using a Cu2ZnSn(Se,S)4 thin-film solar cell made by hydrazine-based solution processing. Key device characteristics were compiled, including light/dark JV, quantum efficiency, temperature dependence of Voc and series resistance, photoluminescence, and capacitance spectroscopy, providing important insight into how the devices compare with high-performance Cu(In,Ga)Se2. The record kesterite device was shown to be primarily limited by interface recombination, minority carrier lifetime, and series resistance. The new level of device performance points to the significant promise of the kesterites as an emerging and commercially interesting thin-film technology. Copyright (c) 2011 John Wiley & Sons, Ltd.

引用

页码：6 / 11

页数：6

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