Photoelectrochemical etching of GaN

被引：12

作者：

Youtsey, C

Bulman, G

Adesida, I

机构：

来源：

GALLIUM NITRIDE AND RELATED MATERIALS II | 1997年 / 468卷

关键词：

D O I：

10.1557/PROC-468-349

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A photoelectrochemical etching process for n-type GaN using KOH solution and broad-area Hg arc lamp illumination is described. Etch rates as high as 320 nm/min are obtained. The etch rate is investigated as a function of light intensity for stirred and unstirred solutions. Preliminary results on etching of Al0.1Ga0.9N layers are reported.

引用

页码：349 / 354

页数：6