Room-temperature epitaxial growth of CeO2(001) thin films on Si(001) substrates by electron beam evaporation

被引：57

作者：

Ami, T ^{[1
]}

Ishida, Y ^{[1
]}

Nagasawa, N ^{[1
]}

Machida, A ^{[1
]}

Suzuki, M ^{[1
]}

机构：

[1] Sony Corp, Frontier Sci Labs, Hodogaya Ku, Yokohama, Kanagawa 2400036, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 10期

关键词：

D O I：

10.1063/1.1351849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of CeO2(001) thin films on Si(001) substrates was achieved by electron beam evaporation. Reflection high-energy electron diffraction and cross-sectional high-resolution transmission electron microscopy established the formation of an epitaxial CeO2(001)/Si(001) structure with a cube-on-cube configuration. The epitaxial structure had to be formed at a temperature below 200 degreesC with a Si(001)-2x1, 1x2 reconstructed surface, and it could be formed even at room temperature. In order to improve the crystallinity, homoepitaxial growth conditions at a higher temperature with a high oxygen flow rate were also investigated. Homoepitaxy of ceria grown on a 5-nm-thick initial layer was demonstrated by theta /2 theta -scan and phi -scan of x-ray diffraction. (C) 2001 American Institute of Physics.

引用

页码：1361 / 1363

页数：3

共 15 条

[1] BI(PB)SRCACUO FILMS ON NISI2/SI-(100), CEO2/SI-(100) AND MGO (001) BY INSITU DC-SPUTTERING
CHIN, TS
HUANG, JY
PERNG, LH
HUANG, TW
YANG, SJ
HSU, SE
[J]. PHYSICA C, 1992, 192 (1-2): : 154 - 160
[2] Crystal and electrical characterizations of epitaxial CeXZr1-XO2 buffer layer for the metal/ferroelectric/insulator/semiconductor field effect transistor
Hirai, T
Nagashima, K
Koike, H
Matsuno, S
Tarui, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B): : 5150 - 5153
[3] Initial stage and growth process of ceria, yttria-stabilized-zirconia and ceria-zirconia mixture thin films on Si(100) surfaces
Hirai, T
Teramoto, K
Koike, H
Nagashima, K
Tarui, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (08): : 5253 - 5258
[4] EPITAXIAL-GROWTH OF CEO2 LAYERS ON SILICON
INOUE, T
YAMAMOTO, Y
KOYAMA, S
SUZUKI, S
UEDA, Y
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (14) : 1332 - 1333
[5] GROWTH OF (110)-ORIENTED CEO2 LAYERS ON (100) SILICON SUBSTRATES
INOUE, T
OHSUNA, T
LUO, L
WU, XD
MAGGIORE, CJ
YAMAMOTO, Y
SAKURAI, Y
CHANG, JH
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (27) : 3604 - 3606
[6] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE
ISHIZAKA, A
SHIRAKI, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671
[7] Epitaxial growth of CeO2(1 0 0) films on Si(1 0 0) substrates by dual ion beams reactive sputtering
Kang, JF
Xiong, GC
Lian, GJ
Wang, YY
Han, RQ
[J]. SOLID STATE COMMUNICATIONS, 1998, 108 (04) : 225 - 227
[8] HETEROEPITAXIAL GROWTH OF CEO2(001) FILMS ON SI(001) SUBSTRATES BY PULSED LASER DEPOSITION IN ULTRAHIGH-VACUUM
NAGATA, H
TSUKAHARA, T
GONDA, S
YOSHIMOTO, M
KOINUMA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (6B): : L1136 - L1138
[9] A proposal of epitaxial oxide thin film structures for future oxide electronics
Suzuki, M
Ami, T
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 41 (01): : 166 - 173
[10] TAKAHASHI Y, 1998, MAT JPN, V37, P421

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