Fabrication of metal-semiconductor nanowire heterojunctions

被引：55

作者：

Zhan, JH

Bando, Y

Hu, JQ

Liu, ZW

Yin, LW

Golberg, D

机构：

[1] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan

[3] Natl Inst Mat Sci, ICYS, Tsukuba, Ibaraki 3050044, Japan

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2005年 / 44卷 / 14期

关键词：

indium; nanostructures; nanotubes; semiconductors; silicon;

D O I：

10.1002/anie.200462813

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanoscale sensors and switches for future electronics may take advantage of metal-semiconductor end-to-end nanowire contacts that can be made by simultaneous evaporation of In and SiO powders. The In and Si subnanowires (indicated) are crystallographically oriented at each junction and are sheathed by silica nanotubes. (Chemical Equation Presented) © 2005 Wiley-VCH Verlag GmbH & Co. KGaA.

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页码：2140 / 2144

页数：5

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