A study of the transition between growth of stoichiometric and silicon-excess silicon carbide by CVD in the system MTS/H-2

Under conditions of medium decomposition of MTS (10-90 %), a transition between region A (growth of nearly stoichiometric SiC) and region B (Si-excess SIC deposition) may be induced by the variations of total flow rate, total pressure or temperature in relatively small intervals, After the modification of one of these parameters, the growth rate reaches rapidly a new stationary value unless the modification leads to a transition from B to A, in this case, the growth rate increases during a transient stage before reaching the steady-state mode, A growth model is presented which explains these observations, A TEM study confirms a prediction of this model.