Improved reliability of AlGaN-GaNHEMTs using an NH3 plasma treatment prior to SiN passivation

被引：111

作者：

Edwards, AP ^{[1
]}

Mittereder, JA ^{[1
]}

Binari, SC ^{[1
]}

Katzer, DS ^{[1
]}

Storm, DF ^{[1
]}

Roussos, JA ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 04期

关键词：

gallium nitride; high electron mobility transistor (HEMT); passivation; reliability;

D O I：

10.1109/LED.2005.844694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A passivation method has been developed which reduced the degradation of AlGaN-GaN high electron mobility transistor (HEMT) electrical properties caused by extended dc bias or microwave power operation. The key aspect of this passivation technique is exposure to a low-power NH3 plasma prior to SiN deposition. Devices fabricated with the NH3 treatment prior to SiN passivation show minimal gate lag and current collapse after extended dc bias operation. In addition, the rate of degradation of the microwave power output while under continuous microwave operation is improved by at least 100 times as compared to SiN passivated HEMTs that were not treated with the NH3 plasma.

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页码：225 / 227

页数：3

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