Magnetopolaron effect on shallow indium donors in CdTe

被引:33
作者
Grynberg, M
Huant, S
Martinez, G
Kossut, J
Wojtowicz, T
Karczewski, G
Shi, JM
Peeters, FM
Devreese, JT
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,GRENOBLE HIGH MAGNET FIELD LAB,F-38042 GRENOBLE 9,FRANCE
[2] CNRS,F-38042 GRENOBLE 9,FRANCE
[3] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND
[4] UNIV ANTWERP,DEPT PHYS,B-2610 ANTWERP,BELGIUM
[5] EINDHOVEN UNIV TECHNOL,NL-5600 MB EINDHOVEN,NETHERLANDS
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 03期
关键词
D O I
10.1103/PhysRevB.54.1467
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The far-infrared photoconductivity technique is applied to study the energy spectrum of shallow indium donors in CdTe layers grown by molecular-beam epitaxy. Accurate experimental data are obtained throughout the energy range relevant to study the resonant polaron effect, including the reststrahlen band. A detailed comparaison of the measured 1s-->2p(+) transition energies is made with the predictions of a variational calculation, in which the electron-phonon interaction is treated as a second-order perturbation. An overall good agreement is found between experiment and theory with the material parameters found in the literature. This gives a Frohlich coupling constant alpha = 0.286.
引用
收藏
页码:1467 / 1470
页数:4
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