Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene

被引：19

作者：

Bourguiga, R ^{[1
]}

Garnier, F

Horowitz, G

Hajlaoui, R

Delannoy, P

Hajlaoui, M

Bouchriha, H

机构：

[1] Fac Sci Bizerte, Jarzouna Bizerte 7021, Tunisia

[2] Grp Mat Mol & Polymeres, Lab Phys Mat Condensee, Tunis 1060, Tunisia

[3] CNRS, Mat Mol Lab, F-94320 Thiais, France

[4] Univ Paris 07, Phys Solides Grp, F-75251 Paris 05, France

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2001年 / 14卷 / 02期

关键词：

D O I：

10.1051/epjap:2001146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-Insulator-Semiconductor Field-Effect-Transistors based on Dihexyl- quaterthiophene (DH4T), has been realized. Unlike conventional MISFET, these devices work through the modulation of an accumulation layer at the semiconductor-insulator interface. An analytical model that describes the operation of organic thin-film-transistors based on a simple trap distribution, with a single shallow trap level located between the valence-band edge and the Fermi level, has been used to determine some microscopic parameters such as the mobility, the density of traps and the corresponding level of traps.

引用

页码：121 / 125

页数：5

共 18 条

[1] Field-effect transistors made from solution-processed organic semiconductors [J].