Indium diffusion inside InBi during and after electrodeposition at various temperatures

The influence of temperature on indium galvanostatic electrodeposition from aqueous solutions on bismuth cathodes has been investigated, as well as the time evolution of the deposit composition. The formation of In-Bi intermetallic compounds was observed owing to indium diffusion into, and reaction inside, the bulk of the cathode. By considering the charge transfer and mass transport phenomena, we estimated the In diffusion coefficient into InBi at 30 to 70 degrees C (from 0.79 x 10(-15) to 3.77 x 10(-15) m(2) s(-1)) and from applying an Arrhenius-type relation, we estimated the activation energy (32.8 kJ mol(-1)) and frequency factor (3.7 x 10(-10) m(2) s(-1)).