Identification of Trap States in Perovskite Solar Cells

被引:203
作者
Baumann, Andreas [1 ]
Vaeth, Stefan [2 ]
Rieder, Philipp [2 ]
Heiber, Michael C. [3 ]
Tvingstedt, Kristofer [2 ,3 ]
Dyakonov, Vladimir [1 ,2 ]
机构
[1] Bavarian Ctr Appl Energy Res eV ZAE Bayern, D-97074 Wurzburg, Germany
[2] Univ Wurzburg, Expt Phys 6, D-97074 Wurzburg, Germany
[3] Tech Univ Chemnitz, Inst Phys, D-09126 Chemnitz, Germany
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2015年 / 6卷 / 12期
关键词
HALIDE PEROVSKITES; RECOMBINATION; TRANSPORT; DEFECTS; SILICON;
D O I
10.1021/acs.jpclett.5b00953
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thermally stimulated current (TSC) measurements are used to characterize electronic trap states in methylammonium lead iodide perovsite solar cells. Several TSC peaks were observed over the temperature range from 20 K to room temperature. To elucidate the origins of these peaks, devices with various organic charge transport layers and devices without transport layers were tested. Two peaks appear at very low temperatures, indicating shallow trap states that are mainly attributed to the PCBM/C-60 electron transport bilayer. However, two additional peaks appear at higher temperatures, that is, they are deeper in energy, and are assigned to the perovskite layer. At around T = 163 K, a sharp peak, also present in the dark TSC measurements, is assigned to the orthorhombic tetragonal phase transition in the perovskite. However, a peak at around T = 191 K is assigned to trap states with activation energies of around 500 meV but with a rather low concentration of 1 x 10(21) m(-3).
引用
收藏
页码:2350 / 2354
页数:5
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