1.5nm equivalent thickness Ta2O5 high-k dielectric with rugged Si suited for mass production of high density DRAMs

被引：13

作者：

Asano, I ^{[1
]}

Kunitomo, M ^{[1
]}

Yamamoto, S ^{[1
]}

Furukawa, R ^{[1
]}

Sugawara, Y ^{[1
]}

Uemura, T ^{[1
]}

Kuroda, J ^{[1
]}

Kanai, M ^{[1
]}

Nakata, M ^{[1
]}

Tamaru, T ^{[1
]}

Nakamura, Y ^{[1
]}

Kawagoe, T ^{[1
]}

Yamada, S ^{[1
]}

Kawakita, K ^{[1
]}

Kawamura, H ^{[1
]}

Nakamura, M ^{[1
]}

Morino, M ^{[1
]}

Kisu, T ^{[1
]}

Iijima, S ^{[1
]}

Ohji, Y ^{[1
]}

Sekiguchi, T ^{[1
]}

Tadaki, Y ^{[1
]}

机构：

[1] Hitachi Ltd, Device Dev Ctr, Tokyo 1988512, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1.5nm equivalent thickness Ta2O5/rugged Si capacitor is demonstrated for mass production of high density DRAM (Dynamic Random Access Memory)s. More than 10 years breakdown lifetime of CVD-TiN/Ta2O5/rugged Si capacitor is experimentally clarified for the first time. Excellent pause refresh property is confirmed by using 0.40mm(2) DRAM cell as well. This system is applicable to 0.16mm(2) cell for production.

引用

页码：755 / 758

页数：4

共 3 条

[1]

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[3]

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