ErAs:(InGaAs)1-x(InAlAs)x alloy power generator modules

被引：27

作者：

Zeng, Gehong ^{[1
]}

Bahk, Je-Hyeong ^{[1
]}

Bowers, John E. ^{[1
]}

Zide, Joshua M. O. ^{[2
]}

Gossard, Arthur C. ^{[2
]}

Bian, Zhixi ^{[3
]}

Singh, Rajeev ^{[3
]}

Shakouri, Ali ^{[3
]}

Kim, Woochul ^{[4
]}

Singer, Suzanne L. ^{[5
]}

Majumdar, Arun ^{[5
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Cruz, Dept Elect Engn, Santa Cruz, CA 95064 USA

[4] Yonsei Univ, Sch Mech Engn, Seoul 120749, South Korea

[5] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 26期

关键词：

D O I：

10.1063/1.2828042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a wafer scale approach for the fabrication of 400 element power generator modules composed of 200 n-type ErAs:(InGaAs)(0.8)(InAlAs)(0.2) and 200 p-type ErAs:InGaAs alloy thermoelectric elements. The thermoelectric properties of the materials were characterized. Two sets of generator modules with the element thicknesses of 20 and 10 mu m, respectively, were fabricated. The 20 mu m module had an output power density of 2.5 W/cm(2) and 3.5 V open circuit voltages, and the 10 mu m generator modules had an output power density of 1.12 W/cm(2) and open circuit voltage of 2.1 V. The performance of thermoelectric generator modules can further be improved by increasing the thicknesses of the elements and reducing the electrical and thermal parasitic resistances. (c) 2007 American Institute of Physics.

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