In situ assembled homojunctions in solution grown Pb1-xFexS nanoparticle films

被引：5

作者：

Joshi, RK ^{[1
]}

Sehgal, HK ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, New Delhi 110016, India

来源：

NANOTECHNOLOGY | 2004年 / 15卷 / 01期

关键词：

D O I：

10.1088/0957-4484/15/1/024

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 [材料科学与工程]; 080502 [材料学];

摘要：

Vacancy induced p-n homojunctions have been successfully grown in situ from an aqueous solution bath in Pb1-xFexS (x = 0.25 and 0.50) semiconductor nanoparticle films. An abrupt change of DC bias to the substrate during growth has been used as a technique to fabricate p-n junctions. (I-V) and (C-V) measurements confirm the formation of homojunctions in the nanoparticle thin films.

引用

页码：127 / 129

页数：3

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