Smoothing of Si trench sidewall surface by chemical dry etching and sacrificial oxidation

被引：14

作者：

Yahata, A ^{[1
]}

Urano, S ^{[1
]}

Inoue, T ^{[1
]}

Shinohe, T ^{[1
]}

机构：

[1] Toshiba Corp, Adv Semicond Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 07期

关键词：

trench; sidewall; chemical dry etching; sacrificial oxidation; smoothing; atomic force microscopy; MOS;

D O I：

10.1143/JJAP.37.3954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By combining the effects of chemical dry etching (CDE) and sacrificial oxidation, a smooth trench sidewall surface with a root-mean-square (Rms) roughness of less than 1 nm was obtained. The possibility of obtaining a smooth surface such as that of a planar metal-oxide-semiconductor (MOS) by increasing both the CDE etching time and the oxide thickness of sacrificial oxidation appeals likely.

引用

页码：3954 / 3955

页数：2

共 6 条

[1]

CHENG HR, 1989, IEEE T ELECTRON DEV, V36, P1824

[2]

HARADA M, 1994, P 6 INT S POW SEM DE, P411

[3]

Kitagawa M., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P679, DOI 10.1109/IEDM.1993.347221

[4]

NAKAMURA K, 1996, P ISPSD, P79

[5] Exact evaluation of channel mobility for trench MOSFET using split C-V method [J].

Yahata, A ;

Inoue, T ;

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APPLIED SURFACE SCIENCE, 1997, 117 :181-186

[6] Striations on Si trench sidewalls observed by atomic force microscopy [J].

Yahata, A ;

Urano, S ;

Inoue, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11) :6722-6723

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