Enhancement of field effect mobility of poly(3-hexylthiophene) thin film transistors by soft-lithographical nanopatterning on the gate-dielectric surface

被引：7

作者：

Park, Jeong-Ho ^{[1
]}

Kang, Seok-Ju ^{[1
]}

Park, Jeong-Woo ^{[1
]}

Lim, Bogyu ^{[1
]}

Kim, Dong-Yu ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Heeger Ctr Adv Mat, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 22期

关键词：

D O I：

10.1063/1.2818662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The submicroscaled octadecyltrichlorosilane (OTS) line patterns on gate-dielectric surfaces were introduced into the fabrication of organic field effect transistors (OFETs). These spin-cast regioregular poly(3-hexylthiophene) films on soft-lithographically patterned SiO2 surfaces yielded a higher hole mobility (similar to 0.072 cm(2)/V s) than those of unpatterned (similar to 0.015 cm(2)/V s) and untreated (similar to 5x10(-3) cm(2)/V s) OFETs. The effect of mobility enhancement as a function of the patterned line pitch was investigated in structural and geometric characteristics. The resulting improved mobility is likely attributed to the formation of efficient pi-pi stacking as a result of guide-assisted, local self-organization-involved molecular interactions between the poly(3-hexylthiophene) polymer and the geometrical OTS patterns. (C) 2007 American Institute of Physics.

引用

页数：3

共 19 条

[1] Materials requirements and fabrication of active matrix arrays of organic thin-film transistors for displays [J].