Fracture testing of bulk silicon microcantilever beams subjected to a side load

被引:110
作者
Wilson, CJ
Beck, PA
机构
[1] Hewlett-Packard Laboratories, Palo Alto
[2] West Virginia University, Morgantown, WV
[3] University of California, Berkeley, CA
[4] R. Stockton State College, Pomona, NJ
[5] Stanford University, Stanford, CA
关键词
D O I
10.1109/84.536620
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A custom experimental system was developed to fracture silicon microcantilever beams in side loading (i.e., the load was applied in the noncompliant direction), and the resulting force/deflection (stiffness) characteristics were obtained. A finite element model of these structures was analyzed using ABAQUS, and the resulting model stiffness correlated well with the experimental data. Fracture types were divided into two categories, {111} and {110}, according to the type of silicon crystalline plane along which fracture occurred. The initiation location of each fracture type was identified. The fracture stress (strength) in the beam was obtained from the stress produced in the model at the fracture initiation site for a load equivalent to the experimental fracture force. Numerous beams were tested, and the statistical results were compiled. The distributions and statistical data from each of the fracture types were compared to each other and to previously acquired results from front/back loading (i.e., loading in the compliant direction) of these same structures. Side-loading results indicated that the {110} fracture type had a greater fracture strength than the {111} type. Based on a comparison of the side loading data with the front/back loading data, it was concluded that side wall roughness and especially the edge roughness greatly affected the fracture strength of the silicon micromechanical structures.
引用
收藏
页码:142 / 150
页数:9
相关论文
共 10 条
[1]   CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].
BRANTLEY, WA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535
[2]   MICROMECHANICAL FRACTURE STRENGTH OF SILICON [J].
ERICSON, F ;
SCHWEITZ, JA .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) :5840-5844
[3]  
*HIBB KARLS SOR IN, 1994, AB US MAN VERS 5 4
[4]   FRACTURE TESTING OF SILICON MICROELEMENTS INSITU IN A SCANNING ELECTRON-MICROSCOPE [J].
JOHANSSON, S ;
SCHWEITZ, JA ;
TENERZ, L ;
TIREN, J .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) :4799-4803
[5]  
Kittel C., 1996, INTRO SOLID STATE PH, V7, P389
[6]  
POURAHMADI F, 1990, SENSOR ACTUAT A-PHYS, V21, P850
[7]  
POURAHMADI F, 1991, INT C SOL STAT SENS, P197
[8]   Fracture testing of silicon microcantilever beams [J].
Wilson, CJ ;
Ormeggi, A ;
Narbutovskih, M .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) :2386-2393
[9]  
Wolfram S., 1991, MATH SYSTEM DOING MA
[10]   YOUNGS MODULUS SHEAR MODULUS AND POISSONS RATIO IN SILICON AND GERMANIUM [J].
WORTMAN, JJ ;
EVANS, RA .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :153-+