RETRACTED: Growth behavior and microstructure evolution of ZnO nanorods grown on Si in aqueous solution (Retracted Article)

被引:52
作者
Liou, SC
Hsiao, CS
Chen, SY
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[2] Taiwan Semicond Mfg Co, Adv Prod Engn Div, Dept Advanced Failure Anal Serv, Hsinchu 300, Taiwan
关键词
aspect ratio; self-assembled; ZnO nanorods;
D O I
10.1016/j.jcrysgro.2004.10.025
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Two substrates, Si and ZnO film-coated Si (ZnOf/Si), were used to investigate growth behavior and microstructure evolution of single-crystal ZnO nanorods (ZNs) in aqueous solutions at low temperatures. It was found that those ZNs present different growth behavior and characterization. Oil pure Si substrate, ZNs were scattered over the entire Si substrate with a preferred orientation in the (1 0 0) plane or grown along the [0 1 (1) over bar 0] direction. HRTEM observation demonstrates that the scattered ZNs exhibit a two-stage growth mechanism with a self-assembly process of ZNs in the later growth stage. In contrast, on ZnOf/Si, well-aligned ZNs were directly nucleated from ZnO film on Si and grown along the [0 0 0 2] direction. In comparison with the scattered ZNs, a larger aspect ratio (length/width) up to 25-30 was obtained for the well-aligned ZNs. In addition, some planar defects such as stacking faults probably resulted due to faster stacking of a ZnO growth unit in the later growth stage. These observations and findings imply that the growth of the well-aligned ZNs from the solution is not related to the used substrates but strongly influenced by the surface treatment and characteristics on the substrate. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:438 / 446
页数:9
相关论文
共 17 条
[1]  
Bailar J.C., 1975, COMPREHENSIVE INORGA, V3
[2]   Growth of single crystal ZnO nanowires using sputter deposition [J].
Chiou, WT ;
Wu, WY ;
Ting, JM .
DIAMOND AND RELATED MATERIALS, 2003, 12 (10-11) :1841-1844
[3]   Soft solution route to directionally grown ZnO nanorod arrays on Si wafer; room-temperature ultraviolet laser [J].
Choy, JH ;
Jang, ES ;
Won, JH ;
Chung, JH ;
Jang, DJ ;
Kim, YW .
ADVANCED MATERIALS, 2003, 15 (22) :1911-+
[4]   Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].
Cui, Y ;
Lieber, CM .
SCIENCE, 2001, 291 (5505) :851-853
[5]   Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].
Duan, XF ;
Huang, Y ;
Cui, Y ;
Wang, JF ;
Lieber, CM .
NATURE, 2001, 409 (6816) :66-69
[6]   Ultraviolet emission in ZnO films controlled by point defects [J].
Lin, CC ;
Hsiao, CS ;
Chen, SY ;
Cheng, SY .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (05) :G285-G288
[7]  
LIN CC, 2004, UNPUB CHEM LETT
[8]   Hydrothermal synthesis of ZnO nanorods in the diameter regime of 50 nm [J].
Liu, B ;
Zeng, HC .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125 (15) :4430-4431
[9]   Synthesis of soluble and processable rod-, arrow-, teardrop-, and tetrapod-shaped CdSe nanocrystals [J].
Manna, L ;
Scher, EC ;
Alivisatos, AP .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2000, 122 (51) :12700-12706
[10]   ZnO nanoneedles grown vertically on Si substrates by non-catalytic vapor-phase epitaxy [J].
Park, WI ;
Yi, GC ;
Kim, MY ;
Pennycook, SJ .
ADVANCED MATERIALS, 2002, 14 (24) :1841-1843