A low-power Ka-band voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology

被引：30

作者：

Chen, YJE ^{[1
]}

Kuo, WML

Jin, ZR

Lee, J

Tretiakov, YV

Cressler, JD

Laskar, J

Freeman, G

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] IBM Microelect, Hopewell Jct, NY USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2005年 / 53卷 / 05期

关键词：

heterojunction bipolar transistor (HBT); Ka-band; line inductor; low power; microstrip line; 1/f noise; phase noise; silicon-germanium (SiGe); voltage-controlled oscillator (VCO);

D O I：

10.1109/TMTT.2005.847063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An integrated low-power low phase-noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-mu m 200-GHz silicon-germanium heterojunction bipolar transistor technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned resonators for Ka-band applications. This VCO can operate from a supply voltage of 1.6-2.5 V. A single-sideband phase noise of -99 dBc/Hz at 1-MHz offset from the carrier frequency of 33 GHz is achieved, together with a VCO figure-of-merit of -183.7 dBc/Hz. The frequency tuning constant of the VCO in the linear regime is -0.547 GHz/V.

引用

页码：1672 / 1681

页数：10

共 34 条

[1]

Chen YJE, 2004, IEEE RAD FREQ INTEGR, P587

[2] LOW-FREQUENCY NOISE PROPERTIES OF N-P-N ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

COSTA, D ;

HARRIS, JS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (10) :2383-2394

[3]

Gleason F. R., 1964, P NAT EL C, P197

[4] DESIGN OF PLANAR RECTANGULAR MICROELECTRONIC INDUCTORS [J].

GREENHOUSE, HM .

IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (02) :101-109

[5] A 28-GHz monolithic integrated quadrature oscillator in SiGe bipolar technology [J].

Hackl, S ;

Böck, J ;

Ritzberger, G ;

Wurzer, M ;

Scholtz, AL .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (01) :135-137

[6]

Heins MS, 1997, IEEE MTT-S, P255, DOI 10.1109/MWSYM.1997.604568

[7]

HIEN DK, 1997, P AS PAC MICR C DEC, V2, P545

[8] A UNIFIED MODEL FOR THE FLICKER NOISE IN METAL OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

HUNG, KK ;

KO, PK ;

HU, CM ;

CHENG, YC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :654-665

[9] A 40 GHz-band fully monolithic VCO with a one-wave length microstrip resonator for accurate oscillation frequency [J].

Ikematsu, H ;

Kawakami, K ;

Katoh, T ;

Itoh, K .

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, :843-846

[10] Very low phase-noise fully-integrated coupled VCOs [J].

Jacobsson, H ;

Hansson, B ;

Berg, H ;

Gevorgian, S .

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, :577-580

← 1 2 3 4 →