Very high frequency silicon nanowire electromechanical resonators

被引:335
作者
Feng, X. L.
He, Rongrui
Yang, Peidong
Roukes, M. L.
机构
[1] CALTECH, Kavli Nanosci Inst, Pasadena, CA 91125 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Dept Chem, Div Sci Mat, Berkeley, CA 94720 USA
关键词
D O I
10.1021/nl0706695
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate very high frequency (VHF) nanomechanical resonators based upon single-crystal silicon nanowires (SiNWs), which are prepared by the bottom-up chemical synthesis. Metallized SiNW resonators operating near 200 MHz are realized with quality factor Q approximate to 2000-2500. Pristine SiNWs, with fundamental resonances as high as 215 MHz, are measured using a VHF readout technique that is optimized for these high resistance devices. The pristine resonators provide the highest Q's, as high as Q approximate to 13100 for an 80 MHz device. SiNWs excel at mass sensing; characterization of their mass responsivity and frequency stability demonstrates sensitivities approaching 10 zeptograms. These SiNW resonators offer significant potential for applications in resonant sensing, quantum electromechanical systems, and high frequency signal processing.
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页码:1953 / 1959
页数:7
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