Doped and undoped ITO nanowires

被引：35

作者：

Kalyanikutty, KP

Gundiah, G

Edem, C

Govindaraj, A

Rao, CNR

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, CSIR, Ctr Excellence Chem, Bangalore 560064, Karnataka, India

来源：

CHEMICAL PHYSICS LETTERS | 2005年 / 408卷 / 4-6期

关键词：

D O I：

10.1016/j.cplett.2005.04.037

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Sn-doped In2O3 (ITO) nanowires have been prepared by carbon-assisted synthesis starting with a powdered mixture of the metal nitrates or with a citric acid gel formed by the metal nitrates. Copious quantities of nanowires could be grown on gold-sputtered Si substrates. The ITO nanowires were single-crystalline and optically transparent. In2O3 nanowires doped with both Sn and Zn can also be prepared by the procedures described. (c) 2005 Elsevier B.V. All rights reserved.

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页码：389 / 394

页数：6

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