Ultra-wideband bismuth-based EDFA for DWDM systems

被引：9

作者：

Guan, BO ^{[1
]}

Tam, HY ^{[1
]}

Liu, SY ^{[1
]}

Wai, PKA ^{[1
]}

Sugimoto, N ^{[1
]}

机构：

[1] Hong Kong Polytech Univ, Photon Res Ctr, Kowloon, Hong Kong, Peoples R China

来源：

PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM | 2003年

关键词：

D O I：

10.1109/COS.2003.1278187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ultra-wideband DWDM amplification of the Lanthanum co-doped bismuth-based erbium-doped fiber (Bi-EDF) amplifier is demonstrated. Over 20 dB of signal gain and NF less than 6.7 dB was achieved for the 50 GHz spacing DVrDM signal spreading over 58 rim wavelength range from 1554 nm to 1612 rim, by employing 253 cm long Bi-EDF pumped with 1480 nm laser. The gain remained 18.2 dB at 1616 nm, and 15.7 dB at 1620 nm. The NF at 1620 nm was only 6.6 dB.

引用

页码：147 / 149

页数：3