Accelerated dynamics simulations of interstitial-cluster growth

被引：22

作者：

Birner, S

Kim, J

Richie, DA

Wilkins, JW

Voter, AF

Lenosky, T

机构：

[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[3] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

[4] Finisar Corp, Sunnyvale, CA 94089 USA

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 120卷 / 7-8期

关键词：

semiconductors; phase transitions; recombination and trapping;

D O I：

10.1016/S0038-1098(01)00391-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We apply parallel replica dynamics to simulate the growth of silicon interstitial clusters. Existing interstitial clusters are efficient traps for mobile interstitial and di-interstitial defects. For clusters involving more than four interstitials, many metastable structures axe achieved by local bonding rearrangements. The shape of interstitial nuclei critically determines the final interstitial clusters. Once an elongated cluster is formed, additional captured interstitials diffuse in the chain direction and eventually settle at the chain ends, resulting in further elongation. (C) 2001 Published by Elsevier Science Ltd.

引用

页码：279 / 282

页数：4

共 14 条

[1] Self-interstitial clustering in crystalline silicon [J].