Strain relaxation of boron nitride thin films on silicon

被引：29

作者：

Donner, W

Dosch, H

Ulrich, S

Ehrhardt, H

Abernathy, D

机构：

[1] Berg Univ Gesamthsch Wuppertal, Fachbereich Phys, D-42285 Wuppertal, Germany

[2] Max Planck Inst Met Forsch, D-70569 Stuttgart, Germany

[3] Univ Kaiserslautern, Inst Dunnschichttechnol, D-67663 Kaiserslautern, Germany

[4] ESRF, F-38042 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 06期

关键词：

D O I：

10.1063/1.121998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exploiting the high brilliance of synchrotron radiation, we performed surface-sensitive and depth-resolved x-ray scattering experiments on thin films of boron nitride grown on Si(001) substrates. In-plane strains of different structural phases, namely turbostratic and cubic, grain sizes and textures were determined. Annealing the films up to temperatures of 1000 degrees C leads to large strain relaxation of about 70%, while the grain size stays constant at 80 Angstrom. (C) 1998 American Institute of Physics.

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页码：777 / 779

页数：3

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