Incorporation kinetics of indium and gallium in indium gallium nitride: A phenomenological model

被引：14

作者：

Storm, DF ^{[1
]}

机构：

[1] Univ Virgin Isl, Div Sci & Math, Charlotte Amalie, VI 00802 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 04期

关键词：

D O I：

10.1063/1.1337592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A phenomenological model of indium and gallium incorporation in InxGa1-xN thin films grown by molecular beam epitaxy is presented. The group III incorporation rates are hypothesized to vary as different powers of the respective metal surface concentrations. A self-blocking process by indium, such as indium droplet formation, is easily inserted into the model in a meaningful way. A two-parameter expression for x is derived and is in excellent quantitative agreement with experimental observations. Finally, there is evidence that suggests the surface lifetime of indium adatoms varies with substrate temperature as (665 degreesC-T-s)(1/2) for 600 degrees < T-s < 665 degreesC. (C) 2001 American Institute of Physics.

引用

页码：2452 / 2457

页数：6

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