Germanium on silicon pin photodiodes for the near infrared

被引：9

作者：

Masini, G

Colace, L

Assanto, G

Luan, HC

Kimerling, LC

机构：

[1] Terza Univ Rome, Dept Elect Engn, I-00146 Rome, Italy

[2] Terza Univ Rome, Natl Inst Phys Matter, I-00146 Rome, Italy

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 25期

关键词：

D O I：

10.1049/el:20001448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel Ge on silicon pin photodetectors have been fabricated and characterised. The devices, designed by considering the defects at the Ge/Si interface, exhibit overall performances that are among the best available, with short-circuit responsivities as high as 0.4A/W at 1.3 mum, dark currents below 20mA/cm(2) and response times shorter than 800ps.

引用

收藏

页码：2095 / 2096

页数：2

相关论文

共 7 条

[1] Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates [J].

Colace, L ;

Masini, G ;

Assanto, G ;

Luan, HC ;

Wada, K ;

Kimerling, LC .

APPLIED PHYSICS LETTERS, 2000, 76 (10) :1231-1233

[2] NORMAL-INCIDENCE STRAINED-LAYER SUPERLATTICE GE0.5SI0.5/SI PHOTODIODES NEAR 1.3 MU-M [J].

HUANG, FY ;

ZHU, X ;

TANNER, MO ;

WANG, KL .

APPLIED PHYSICS LETTERS, 1995, 67 (04) :566-568

[3] High-quality Ge epilayers on Si with low threading-dislocation densities [J].

Luan, HC ;

Lim, DR ;

Lee, KK ;

Chen, KM ;

Sandland, JG ;

Wada, K ;

Kimerling, LC .

APPLIED PHYSICS LETTERS, 1999, 75 (19) :2909-2911

[4] NEW INFRARED DETECTOR ON A SILICON CHIP [J].

LURYI, S ;

KASTALSKY, A ;

BEAN, JC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) :1135-1139

[5] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J].

OLDHAM, WG ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1964, 7 (02) :153-165

[6] High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers [J].

Samavedam, SB ;

Currie, MT ;

Langdo, TA ;

Fitzgerald, EA .

APPLIED PHYSICS LETTERS, 1998, 73 (15) :2125-2127

[7] GEXSI1-X STRAINED-LAYER SUPERLATTICE WAVE-GUIDE PHOTODETECTORS OPERATING NEAR 1.3 MU-M [J].

TEMKIN, H ;

PEARSALL, TP ;

BEAN, JC ;

LOGAN, RA ;

LURYI, S .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :963-965