Characterization of PZT thick films derived from sol-gel techniques

被引：3

作者：

Cheng, JR ^{[1
]}

Luo, LQ ^{[1
]}

Meng, ZY ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China

来源：

FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 2000年 / 4086卷

关键词：

sol-gel; PZT thick films; internal bias field; self-poling; intrinsic piezoelectric responses;

D O I：

10.1117/12.408336

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Crack free and preferred orientation Pb(ZrxTi1-x)O-3 (x = 0.45) thick films were prepared onto Pt(111)/Ti/TiO2/Si substrates by sol-gel and RTA techniques. Dielectric constants of PZT films increase with increasing the thickness. The as-prepared PZT films exhibited self-poling phenomenon and intrinsic piezoelectric responses. The PZT thick and thin films have different self-poling and poling effects. The internal bias field contributed to the intrinsic piezoelectric responses.

引用

页码：617 / 620

页数：4

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