Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors

被引：231

作者：

Mathijssen, Simon G. J.

Colle, Michael

Gomes, Henrique

Smits, Edsger C. P.

de Boer, Bert

McCulloch, Iain

Bobbert, Peter A.

de Leeuw, Dago M.

机构：

[1] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[3] Univ Algarve, Fac Sci & Technol, P-8005139 Faro, Portugal

[4] Dutch Polymer Inst, NL-5600 AX Eindhoven, Netherlands

[5] Univ Groningen, Mol Elect Mat Sci Ctr, NL-9747 AG Groningen, Netherlands

[6] Univ Parkway, Southampton SO16 7QD, Hants, England

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 19期

关键词：

THIN-FILM TRANSISTORS; STRETCHED-EXPONENTIAL RELAXATION; MEYER-NELDEL RULE; DEFECT CREATION; STABILITY; INSTABILITY; DEPENDENCE; BOND;

D O I：

10.1002/adma.200602798

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The electrical instability of organic field-effect transistors is investigated. We observe that the threshold-voltage shift (see figure) shows a stretched-exponential time dependence under an applied gate bias. The activation energy of 0.6 eV is common for our and all other organic transistors reported so far. The constant activation energy supports charge trapping by residual water as the common origin.

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页码：2785 / +

页数：6

相关论文

共 22 条

[1] Pentacene-based radio-frequency identification circuitry [J].

Baude, PF ;

Ender, DA ;

Haase, MA ;

Kelley, TW ;

Muyres, DV ;

Theiss, SD .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3964-3966

[2] CONNECTION BETWEEN THE MEYER-NELDEL RULE AND STRETCHED-EXPONENTIAL RELAXATION [J].

CHEN, YF ;

HUANG, SF .

PHYSICAL REVIEW B, 1991, 44 (24) :13775-13778

[3] DEFECT RELAXATION IN AMORPHOUS-SILICON - STRETCHED EXPONENTIALS, THE MEYER-NELDEL RULE, AND THE STAEBLER-WRONSKI EFFECT [J].

CRANDALL, RS .

PHYSICAL REVIEW B, 1991, 43 (05) :4057-4070

[4] Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors [J].

Deane, SC ;

Wehrspohn, RB ;

Powell, MJ .

PHYSICAL REVIEW B, 1998, 58 (19) :12625-12628

[5] Electrical instabilities in organic semiconductors caused by trapped supercooled water [J].

Gomes, HL ;

Stallinga, P ;

Cölle, M ;

de Leeuw, DM ;

Biscarini, F .

APPLIED PHYSICS LETTERS, 2006, 88 (08)

[6] Bias-induced threshold voltages shifts in thin-film organic transistors [J].

Gomes, HL ;

Stallinga, P ;

Dinelli, F ;

Murgia, M ;

Biscarini, F ;

de Leeuw, DM ;

Muck, T ;

Geurts, J ;

Molenkamp, LW ;

Wagner, V .

APPLIED PHYSICS LETTERS, 2004, 84 (16) :3184-3186

[7]

Huitema E, 2005, WILEY-SID SER DISPL, P245, DOI 10.1002/0470870508.ch13

[8] Organic small molecule field-effect transistors with Cytop™ gate dielectric:: Eliminating gate bias stress effects [J].

Kalb, W. L. ;

Mathis, T. ;

Haas, S. ;

Stassen, A. F. ;

Batlogg, B. .

APPLIED PHYSICS LETTERS, 2007, 90 (09)

[9] Bias-dependent generation and quenching of defects in pentacene [J].

Lang, DV ;

Chi, X ;

Siegrist, T ;

Sergent, AM ;

Ramirez, AP .

PHYSICAL REVIEW LETTERS, 2004, 93 (07) :076601-1

[10] Bias-stress induced instability of organic thin film transistors [J].

Matters, M ;

de Leeuw, DM ;

Herwig, PT ;

Brown, AR .

SYNTHETIC METALS, 1999, 102 (1-3) :998-999