Positive bilayer resists for 248 and 193 nm lithography

被引：28

作者：

Sooriyakumaran, R ^{[1
]}

Wallraff, GM ^{[1
]}

Larson, CE ^{[1
]}

Fenzel-Alexander, D ^{[1
]}

DiPietro, RA ^{[1
]}

Opitz, J ^{[1
]}

Hofer, DC ^{[1
]}

LaTulipe, DC ^{[1
]}

Simons, JP ^{[1
]}

Lin, QH ^{[1
]}

Katnani, AD ^{[1
]}

机构：

[1] IBM, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷

关键词：

bilayer resist; 248 nm lithography; silicon; 193; nm;

D O I：

10.1117/12.312411

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have designed and developed new silicon containing methacrylate monomers that can be used in bilayer resist systems. New monomers were developed because the commercially available silicon monomers were found to be unsuitable for our applications. During the course of the investigation we determined that these monomers were acid labile. We have developed a high resolution DUV bilayer resist system based on these monomers. Although most of our work was concentrated on 248 nm lithography, we have demonstrated that this chemistry can be extended to 193 nm applications.

引用

页码：219 / 227

页数：3