Photocurrent of CdSe nanocrystals on single-walled carbon nanotube-field effect transistor

被引:27
作者
Jeong, Seung Yol [1 ]
Lim, Seong Chu [1 ]
Bae, Dong Jae [1 ]
Lee, Young Hee [1 ]
Shin, Hyun Jin [2 ]
Yoon, Seon-Mi [2 ]
Choi, Jae Young [2 ]
Cha, Ok Hwan [3 ]
Jeong, Mun Seok [3 ]
Perello, David [4 ]
Yun, Minhee [4 ]
机构
[1] Sungkyunkwan Univ, Ctr Nanotubes & Nanostruct Composites, Phys Div BK21, Sungkyunkwan Adv Inst Nanotechnol, Suwon 440746, South Korea
[2] Samsung Adv Inst Technol, Mat Ctr, Suwon 440600, South Korea
[3] GIST, Adv Photon Res Inst, Kwangju 500712, South Korea
[4] Univ Pittsburgh, Dept Elect & Comp Engn, Pittsburgh, PA 15261 USA
关键词
D O I
10.1063/1.2944813
中图分类号
O59 [应用物理学];
学科分类号
摘要
CdSe nanocrystals (NCs) have been decorated on single-walled carbon nanotubes (SWCNTs) by combining a method of chemically modified substrate along with gate-bias control. CdSe/ZnS core/shell quantum dots were negatively charged by adding mercaptoacetic acid. The silicon oxide substrate was decorated by octadecyltrichlorosilane and converted to hydrophobic surface. The negatively charged CdSe NCs were adsorbed on the SWCNT surface by applying a negative gate bias. The measured photocurrent clearly demonstrates that CdSe NCs decorated SWCNT can be used for photodetector and solar cell that are operable over a wide range of wavelengths.
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页数:3
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