Externally assembled gate-all-around carbon nanotube field-effect transistor

被引：85

作者：

Chen, Zhihong ^{[1
]}

Farmer, Damon ^{[3
]}

Xu, Sheng ^{[2
]}

Gordon, Roy ^{[2
]}

Avouris, Phaedon ^{[1
]}

Appenzeller, Joerg ^{[4
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA

[3] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

[4] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 02期

关键词：

carbon nanotube (CN); field-effect transistor (FET); gate-all-around (GAA);

D O I：

10.1109/LED.2007.914069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we demonstrate a gate-all-around single-wall carbon nanotube field-effect transistor. This is the first successful experimental implementation of an off-chip gate and gate-dielectric assembly with subsequent deposition on a suitable substrate. The fabrication process and device measurements are discussed in the letter. We also argue in how far charges in the gate oxide are responsible for the observed nonideal device performance.

引用

页码：183 / 185

页数：3

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